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Skip to main content. Emergent Phenomena at Mott Interfaces. Multidisciplinary University Research Initiative Supported by the Army Research Office. Mott MURI Review and Oxide Interfaces Meeting. August 7 - 9, 2012. REGISTER NOW AT THIS LINK. Cambridge, MA 02138. Hotels in the Harvard Square area.

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seasoxides | oxides.seas.harvard.edu Reviews

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Skip to main content. Emergent Phenomena at Mott Interfaces. Multidisciplinary University Research Initiative Supported by the Army Research Office. Mott MURI Review and Oxide Interfaces Meeting. August 7 - 9, 2012. REGISTER NOW AT THIS LINK. Cambridge, MA 02138. Hotels in the Harvard Square area.

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Agenda | seasoxides

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Skip to main content. Emergent Phenomena at Mott Interfaces. Multidisciplinary University Research Initiative Supported by the Army Research Office. Tuesday, August 7, 2012. The Harvard Faculty Club. Oleg Shpyrko, UCSD. Nanoscale X-ray imaging of correlated oxides. Steve May, Drexel Univ. Measuring and controlling octahedral behavior in oxide heterostructures. Chris Marianetti, Columbia Univ. Hyowon Park, Columbia. Site-Selective Mott transition in rare earth nickelates. 1:30 - 2:10 PM. 2:10 - 2:50 PM.

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Skip to main content. Emergent Phenomena at Mott Interfaces. Multidisciplinary University Research Initiative Supported by the Army Research Office. Mott MURI Review and Oxide Interfaces Meeting. August 7 - 9, 2012. REGISTER NOW AT THIS LINK. Cambridge, MA 02138. Hotels in the Harvard Square area.

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MURI Publications

http://mottmuri.mrl.ucsb.edu/MURIPublications/MURIpublications.html

Oxide Interfaces Workshop (August 7-8, 2012). Energetic, spatial, and momentum character of the electronic structure at a buried interface: The two-dimensional electron gas between two metal oxides. S Nemsak, et al. Phys. Rev. B. 93, 245103 (2016). Tuning bad metal and non-Fermi liquid behavior in a Mott material: rare earth nickelate thin films. Observation by resonant angle-resolved photoemission of a critical thickness for 2- dimensional electron gas formation in SrTiO3 embedded in GdTiO3. Depth Profi...

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Mott MURI Program Members

http://mottmuri.mrl.ucsb.edu/members.html

Oxide Interfaces Workshop (August 7-8, 2012). UCSB): MURI lead-PI; Oxide molecular beam epitaxy, scanning transmission electron microscopy. Laboratory webpage. UCSB): Multifrequency transport studies of oxide interfaces. Laboratory webpage. UCSB): Theory of oxide interfaces. Laboratory webpage. UCD): Interface spectroscopy. Laboratory webpage. Stanford): Oxide interface transport studies. Laboratory webpage. UCSB): Oxide molecular beam epitaxy; in-situ characterization. Laboratory webpage.

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Emergent Phenomena at Mott Interfaces

http://mottmuri.mrl.ucsb.edu/index.html

Oxide Interfaces Workshop (August 7-8, 2012). The goal of the multidisciplinary research initiative (MURI) Emergent Phenomena at Mott Interfaces is to establish fundamentally new approaches to predict, understand and control the wealth of electronic, spin and collective mode excitations associated with complex oxide interfaces. We are particularly interested in. Approaches that can be used to engineer interfaces using. Interfaces will be assessed for future electronic, spintronic.

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Skip to main content. Emergent Phenomena at Mott Interfaces. Multidisciplinary University Research Initiative Supported by the Army Research Office. Mott MURI Review and Oxide Interfaces Meeting. August 7 - 9, 2012. REGISTER NOW AT THIS LINK. Cambridge, MA 02138. Hotels in the Harvard Square area.

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