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Point Nine Technologies, Inc. - RF MOSFET'sPoint Nine Technologies, Inc. – Patented
http://www.rfmosfet.com/
Point Nine Technologies, Inc. – Patented
http://www.rfmosfet.com/
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Point Nine Technologies, Inc. - RF MOSFET's | rfmosfet.com Reviews
https://rfmosfet.com
Point Nine Technologies, Inc. – Patented
rfmosfet.com
Point Nine Technologies, Inc. - RF MOSFET's
http://www.rfmosfet.com/index.html
Welcome to Point Nine Technologies, Inc. Point Nine Technologies, Inc. has worked intensively to produce a metal gate field effect transistor process that outperforms the industry standard silicon gate and bipolar process. Current vertical DMOS devices, TetraFET's from Point Nine are capable of greater than 13dB gain at 1 GHz, which is 3-4dB better than the best of similar DMOS devices. Power to 200 watts. Gain flatness over very wide bandwidth. Frequency DC to 1.5GHz.
Point Nine Technologies, Inc. - RF MOSFET Products
http://www.rfmosfet.com/products.html
Are avalable on line here. Or as a downloadable PDF. Including spice is avalable as a 167 page (15MB) PDF. Point Nine Technologies, Inc Phone (805) 375-6600 Fax (805) 375-6602 email.
About Point Nine Technologies, Inc. - RF MOSFET's
http://www.rfmosfet.com/about.html
Point Nine started in 1988, and has been continuously profitable since 1992. Point Nine is dedicated and focused on making the best RF power transistors on the market. We produce only our own designs; from concept, through wafer fab, assembly and test. We are a hands-on company, involved in all phases of manufacturing our products. We are able to give our full attention to making gold metalized, metal gate MOSFET's since we choose to not make any other products. We give one week delivery for most products.
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Point Nine Technologies, Inc. - RF MOSFET's
Welcome to Point Nine Technologies, Inc. Point Nine Technologies, Inc. has worked intensively to produce a metal gate field effect transistor process that outperforms the industry standard silicon gate and bipolar process. Current vertical DMOS devices, TetraFET's from Point Nine are capable of greater than 13dB gain at 1 GHz, which is 3-4dB better than the best of similar DMOS devices. Power to 200 watts. Gain flatness over very wide bandwidth. Frequency DC to 1.5GHz.
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