sdh-galung.blogspot.com

Dr. Sabar D. Hutagalung

Thursday, March 13, 2014. Rapid formation of transparent CuAlO2 thin film by thermal annealing of Cu on Al2O3. Film was formed by solid state reaction of evaporated thin film Cu on c-cut Al. Sapphire) at 1200 °C for reaction times as short as 10 min. X-ray diffractogram confirms the formation of (0 0 l) CuAlO. Indicating oriented growth of CuAlO. Fourier transformation infra-red (FTIR) spectra showed peaks corresponding to Cu–O, Al–O and O–Cu–O bonds, confirming further the CuAlO. Volume 93, Issue 8.

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Thursday, March 13, 2014. Rapid formation of transparent CuAlO2 thin film by thermal annealing of Cu on Al2O3. Film was formed by solid state reaction of evaporated thin film Cu on c-cut Al. Sapphire) at 1200 °C for reaction times as short as 10 min. X-ray diffractogram confirms the formation of (0 0 l) CuAlO. Indicating oriented growth of CuAlO. Fourier transformation infra-red (FTIR) spectra showed peaks corresponding to Cu–O, Al–O and O–Cu–O bonds, confirming further the CuAlO. Volume 93, Issue 8.

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Dr. Sabar D. Hutagalung | sdh-galung.blogspot.com Reviews

https://sdh-galung.blogspot.com

Thursday, March 13, 2014. Rapid formation of transparent CuAlO2 thin film by thermal annealing of Cu on Al2O3. Film was formed by solid state reaction of evaporated thin film Cu on c-cut Al. Sapphire) at 1200 °C for reaction times as short as 10 min. X-ray diffractogram confirms the formation of (0 0 l) CuAlO. Indicating oriented growth of CuAlO. Fourier transformation infra-red (FTIR) spectra showed peaks corresponding to Cu–O, Al–O and O–Cu–O bonds, confirming further the CuAlO. Volume 93, Issue 8.

INTERNAL PAGES

sdh-galung.blogspot.com

1

Dr. Sabar D. Hutagalung: Silicon Nanowire Transistor (SiNWT)

http://sdh-galung.blogspot.com/2009/11/silicon-nanowire-transistor.html

Thursday, November 19, 2009. Silicon Nanowire Transistor (SiNWT). Silicon Nanowire Transistor Fabricated by AFM Nanolithography. Sabar D. Hutagalung, Zainovia Lockman, Lew Kam Chung, A. Makarimi Abdullah. Amboih pak sabar. cantik gambar-gambar di conferences. ZL. December 2, 2009 at 7:33 AM. K la tu. ada gambar sensitive. dah dibuang! April 3, 2010 at 4:19 AM. Subscribe to: Post Comments (Atom). Now I'm staying in Jazan, Kingdom of Saudi Arabia. View my complete profile. ChinaNano 2005, Beijing, June 2005.

2

Dr. Sabar D. Hutagalung: Kabinet Rakyat

http://sdh-galung.blogspot.com/2009/04/kabinet-rakyat.html

Thursday, April 9, 2009. KUALA LUMPUR 10 April — Timbalan Perdana Menteri Tan Sri Muhyiddin Yassin hari ini mengetuai barisan menteri dan timbalan menteri yang dilantik semalam mengangkat sumpah jawatan dan taat setia serta sumpah simpan rahsia di hadapan Yang di-Pertuan Agong Tuanku Mizan Zainal Abidin di Istana Negara. Upacara itu yang diadakan di Balairong Seri Istana Negara bermula tepat 9.30 pagi dengan penerimaan surat cara pelantikan oleh Muhyiddin selaku Timbalan Perdana Menteri. Malacca, Feb 2006.

3

Dr. Sabar D. Hutagalung: High frequency response to the impedance complex properties of Nb-doped CaCu3Ti4O12 electroceramics

http://sdh-galung.blogspot.com/2014/03/high-frequency-response-to-impedance.html

Thursday, March 13, 2014. High frequency response to the impedance complex properties of Nb-doped CaCu3Ti4O12 electroceramics. Impedance analyses was performed on undoped and Nb-doped CaCu. Journal of Alloys and Compounds. Volume 509, Issue 18. 5 May 2011, Pages 5701–5707. Subscribe to: Post Comments (Atom). Now I'm staying in Jazan, Kingdom of Saudi Arabia. View my complete profile. Our Campus, USM Engineering Campus, 14300 Nibong Tebal, Penang, Malaysia. ChinaNano 2005, Beijing, June 2005. AMEC-5, Bang...

4

Dr. Sabar D. Hutagalung: Improvement in dielectric properties of Zn-doped CaCu3Ti4O12

http://sdh-galung.blogspot.com/2014/03/improvement-in-dielectric-properties-of.html

Thursday, March 13, 2014. Improvement in dielectric properties of Zn-doped CaCu3Ti4O12. A single-phase of calcium copper titanate (CaCu. Was produced at lower temperature and shorter calcination time via a combination of solid state reaction and mechanical alloying techniques. The raw materials mixture was subjected to fast ball-milling for 5 h. The mixture was calcined at 750 °C for 9 h to form a single-phase CaCu. Effect of zinc dopant to the dielectric properties of CaCu. Volume 476, Issues 1–2. ICMAT...

5

Dr. Sabar D. Hutagalung: The role of tin oxide addition on the properties of microwave treated CaCu3Ti4O12

http://sdh-galung.blogspot.com/2014/03/the-role-of-tin-oxide-addition-on.html

Thursday, March 13, 2014. The role of tin oxide addition on the properties of microwave treated CaCu3Ti4O12. A microwave (MW) irradiation process was performed to pre-sintered CaCu. A conventional furnace was used for calcination as well as for the sintering processes, whilst a domestic microwave oven was employed for MW irradiation in order to produce better morphology, improved phase structures and dielectric properties of CaCu. Decreases exponentially with mole percentages of SnO. Volume 112, Issue 1.

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sdh-galung.blogspot.com

Dr. Sabar D. Hutagalung

Thursday, March 13, 2014. Rapid formation of transparent CuAlO2 thin film by thermal annealing of Cu on Al2O3. Film was formed by solid state reaction of evaporated thin film Cu on c-cut Al. Sapphire) at 1200 °C for reaction times as short as 10 min. X-ray diffractogram confirms the formation of (0 0 l) CuAlO. Indicating oriented growth of CuAlO. Fourier transformation infra-red (FTIR) spectra showed peaks corresponding to Cu–O, Al–O and O–Cu–O bonds, confirming further the CuAlO. Volume 93, Issue 8.

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