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Advanced Semiconductor Laboratory - King Abdullah University of Science and Technology

semiconductor, kaust, III-nitride, MOCVD, MOVPE

http://semiconductor.kaust.edu.sa/

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Advanced Semiconductor Laboratory - King Abdullah University of Science and Technology | semiconductor.kaust.edu.sa Reviews
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Advanced Semiconductor Laboratory - King Abdullah University of Science and Technology | semiconductor.kaust.edu.sa Reviews

https://semiconductor.kaust.edu.sa

semiconductor, kaust, III-nitride, MOCVD, MOVPE

INTERNAL PAGES

semiconductor.kaust.edu.sa semiconductor.kaust.edu.sa
1

Advanced Semiconductor Laboratory - ASL welcomes the fourth intern student, Wenzhe!

https://semiconductor.kaust.edu.sa/Pages/news_2016_11_06.aspx

Developing cutting-edge technologies based on III-nitride semiconductors. ASL welcomes the fourth intern student, Wenzhe! ASL welcomes the fourth intern student, Wenzhe! ASL welcomes the fourth intern student, Wenzhe! Please contact Prof Li for more info. Developing cutting-edge technologies based on III-nitride semiconductors.

2

Advanced Semiconductor Laboratory - News

https://semiconductor.kaust.edu.sa/Pages/News.aspx

Developing cutting-edge technologies based on III-nitride semiconductors. Nasir's APL: The first demonstration of a link between the energy exchanged during the light-solid reaction and the thermodynamic entropy of nanowire structures. Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires. Our Nanoscale paper of Bilal (PL) and Haiding (ASL) on nanowire UV emitters is featured in Compound Semiconductor! Please contact Profs Ooi and Li for more info. Please contact Prof Li for more info.

3

Advanced Semiconductor Laboratory - Kuang-Hui and Hamad filed a U.S. patent application on their ground-breaking MOCVD technologies!

https://semiconductor.kaust.edu.sa/Pages/news_2016_09_14.aspx

Developing cutting-edge technologies based on III-nitride semiconductors. Kuang-Hui and Hamad filed a U.S. patent application on their ground-breaking MOCVD technologies! Kuang-Hui and Hamad filed a U.S. patent application on their ground-breaking MOCVD technologies! Kuang-Hui and Hamad filed a U.S. patent application on their ground-breaking MOCVD technologies! Please contact Prof Li for more info. Developing cutting-edge technologies based on III-nitride semiconductors.

4

Advanced Semiconductor Laboratory - Our funding proposal has been accepted for the 1st GCC Research Program!

https://semiconductor.kaust.edu.sa/Pages/news_2016_12_01.aspx

Developing cutting-edge technologies based on III-nitride semiconductors. Our funding proposal has been accepted for the 1st GCC Research Program! Our funding proposal has been accepted for the 1st GCC Research Program! Our funding proposal has been accepted for the GCC Research Program! Please contact Prof Li for more info . Http:/ www.qu.edu.qa/gcc research council/accepted projects.php. Developing cutting-edge technologies based on III-nitride semiconductors.

5

Advanced Semiconductor Laboratory - Blog

https://semiconductor.kaust.edu.sa/Pages/Blog.aspx

Developing cutting-edge technologies based on III-nitride semiconductors. Hexagonal Boron Nitride, direct bandgap or indirect bandgap? Feng Wu - February 27, 2017. Hexagonal Boron Nitride, direct bandgap or indirect bandgap? Hexagonal boron nitride has attracted a lot of attentions because of its unique properties, such as a wide bandgap, low dielectric constant, high thermal conduct. III-Nitride Based High Electron Mobility Transistor. Wenzhe Guo - February 26, 2017. Ronghui Lin - February 25, 2017.

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