Homepage Semimap Scientific Instruments GmbH develops measurement systems for to evaluate electrical properties of semi-insulating compound semiconductor substrates. COREMA-WT, COREMA-RM and CORMA-VT characterize substrate properties with respect to resistivity, mobility and carrier concentration for GaAs, InP, SiC, GaN and CdTe
http://www.semimap.de/
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Semimap COREMA Contactless Resistivity Mapping for GaAs and SiC | semimap.de Reviews
https://semimap.de
Homepage Semimap Scientific Instruments GmbH develops measurement systems for to evaluate electrical properties of semi-insulating compound semiconductor substrates. COREMA-WT, COREMA-RM and CORMA-VT characterize substrate properties with respect to resistivity, mobility and carrier concentration for GaAs, InP, SiC, GaN and CdTe
semimap.de
Semimap COREMA Contactless Resistivity Mapping for GaAs and SiC
http://www.semimap.de/index.htm
SemiMap Scientific Instruments GmbH develops measurement systems to evaluate electrical properties of semi-insulating compound semiconductor substrates. GaAs, InP, SiC, GaN and CdTe. Are chearacterized by SemiMap systems with respect to resistivity, mobility and carrier concentration. The non-destrucive contactless capacitive measurement technique requires no sample preparation and generates full wafer resistivity topograms revealing lateral variations as small as 1% with high lateral resolution.
Semimap Forum
http://www.semimap.de/Semimap_forum.htm
Related papers by collaborating authors and other groups:. PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals. Rasp, Th.L. Straubinger, E. Schmitt, M. Bickermann, S. Reshanov and H. Sadowski,. Mat Science Forum 433-436 (2003) 55. Development of Large Diameter High-Purity Semi-insulating 4H-SiC Wafers for Microwave Devices. IF you have questions or comments, please send your E-mail to: info@semimap.de.
Semimap Mission
http://www.semimap.de/Semimap_mission.htm
Company Background and Mission. The rapid growth of the telecommunications market has dramatically increased the demand for high-speed analog and digital microelectronic devices. Such circuits are preferentially fabricated on substrates with high electrical resistivity. Therefore, sales of semi-insulating GaAs, InP. And SiC wafers are growing rapidly. Concurrently, steady improvements of the crystal growth and wafer fabrication technologies yield better material quality and increased wafer diameters.
Semimap Presentation
http://www.semimap.de/Semimap_presentation.htm
GaAs MANTECH 2002, Miami Beach, USA. 3, Erlangen, Germany. S-MAX 2004, Monterey, USA. MANTECH 2005, San Diego, USA. 2007, Oton, Japan. 2008, Barcelona, Spain [PDF]. IF you have questions or comments, please send your E-mail to: info@semimap.de.
Semimap Publications
http://www.semimap.de/Semimap_publications.htm
Basic papers and overview reports:. Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement. R Stibal, J. Windscheif and W. Jantz, Semicond. Sci. Technol. 6 (1991) 955. Contactless resistivity mapping of semi-insulating substrates. W Jantz and R. Stibal, III-Vs Review 6 (1993) 382. Quality assessment of LEC grown semi-insulating GaAs substrates. W Jantz, dgkk Mitteilungsblatt 54 (1991) 19. Global standardization of compound semiconductor test methods.
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Semimap COREMA Contactless Resistivity Mapping for GaAs and SiC
SemiMap Scientific Instruments GmbH develops measurement systems to evaluate electrical properties of semi-insulating compound semiconductor substrates. GaAs, InP, SiC, GaN and CdTe. Are chearacterized by SemiMap systems with respect to resistivity, mobility and carrier concentration. The non-destrucive contactless capacitive measurement technique requires no sample preparation and generates full wafer resistivity topograms revealing lateral variations as small as 1% with high lateral resolution.
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