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Ukrainian Chapter of SPIE | spie.org.ua Reviews

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Ukrainian Chapter of SPIE

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SQO N1 2005 Contents

http://journal-spqeo.org.ua/n1_2005/n1_2005_contents.htm

Author Index (pdf .K). SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS. 1) Local atomic structures in Si. VG Deibuk, Yu.G. Korolyuk. 6) Spin ballistic transport and quantum intreference in mesoscopic loop structures. I Tralle , W. Pasko. 19) Application of method of projective representations for TO analysis of exciton-phonon transitions in enantiomorphous tetragonal crystals ZnP. SV Koryakov, V.O. Gubanov, M.M. Biliy, O.V. Slobodyanyuk, Z.Z. Yanchuk. Junction depth in ion milled. LYu Khomenkova, N.E....64) T...

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SQO N1 2007 Contents

http://journal-spqeo.org.ua/n1_2007/n1_2007_contents.htm

Author Index (pdf .K). SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS. Contents Volume 10, N1. 1) Calculation of electron mobility and effect of dislocation scattering in GaN. Janardan Kundu, C.K. Sarkar, P.S. Mallick. 4) The radiation hardness of pulled silicon doped with germanium. AP Dolgolenko, G.P. Gaidar, M.D. Varentsov, P.G. Litovchenko. 13) Qualitative analysis of electron states in nanoobjects. 18) The role of multicomponent surface diffusion in growth and doping of silicon nanowires. 49) Polarizati...

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SQO N1 2004 Contents

http://journal-spqeo.org.ua/n1_2004/n1_2004_contents.htm

Author Index (pdf .K). SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS. Exciton effects in band-edge electroluminescence of silicon barrier structures. AV Sachenko, A.P. Gorban, D.V. Korbutyak,V.P. Kostylyov, Yu.V. Kryuchenko, V.V. Chernenko. 8) Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons. AP Dolgolenko, P.G. Litovchenko, A.P. Litovchenko, M.D. Varentsov, V.F. Lastovetsky, G.P. Gaidar. 16) Nucleation, growth and transformation of microdefects in FZ-Si.

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Journal SPQEO Vol 15, 2012

http://journal-spqeo.org.ua/n1_2012/n1_2012_contents.htm

ISSN 1605-6582 (On-line) ISSN 1560-8034 (Print) ISSN 1606-1365 (CD). Volume 15 N 1. DOI: 10.15407/spqeo15.01. Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements. Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.1. P. 001-007. Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters. Sarikov, V. Naseka. Interface features of SiO. Phase diagrams of Si. M Vakiv, R. ...

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Journal SPQEO Vol 16, 2013

http://journal-spqeo.org.ua/n1_2013/n1_2013_contents.htm

ISSN 1605-6582 (On-line) ISSN 1560-8034 (Print) ISSN 1606-1365 (CD). Volume 16 N 1. DOI: 10.15407/spqeo16.01. Lateral multijunction photovoltaic cells. AV Sachenko, M.R. Kulish, I.O. Sokolovskyi, V.P. Kostylyov. Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.1. P. 001-017. Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances. Photoelectrical analysis of n-TiO. Semiconductor phys...

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Journal SPQEO Vol 13, 2010

http://journal-spqeo.org.ua/n1_2010/n1_2010_contents.htm

ISSN 1605-6582 (On-line) ISSN 1560-8034 (Print) ISSN 1606-1365 (CD). Volume 13 N 1. DOI: http:/ dx.doi.org/10.15407/spqeo13.01. X-ray diffraction study of deformation state in InGaN/GaN multilayered structures. PV Parphenyuk, A.A. Evtukh. Semiconductor physics, quantum electronics and optoelectronics. 2010. V.13, N.1. P. 001-007. The features of temperature dependence of contact resistivity of Au Ti Pd. Electrical properties of semiconductor structures with Si nanoclusters in SiO. SW Lee, S.I. Vl...Radia...

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SQO N1 2002 Contents

http://journal-spqeo.org.ua/n1_2002/n1_2002_contents.htm

SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS. 5) Electronic band structure and magnetic susceptibility of Ge. VG Deibuk, S.I. Shakhovtsova, V.A. Shenderovski, V.M. Tsmots. 9) Urbach's rule peculiarities in structures with CdS. VP Kunets, N.R. Kulish, Vas. P. Kunets, M.P. Lisitsa. 16) Atomic and electronic structure of a-SiC. VI Ivashchenko, V.I. Shevchenko. 25) Influence of g-irradiation on photoluminescence spectra of CdTe:Cl. 31) Properties and application of ultrasonic Lamb waves in Cd. NA Vlasenko, Z&#...

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SQO N1 2009 Contents

http://journal-spqeo.org.ua/n1_2009/n1_2009_contents.htm

SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS. Volume 12 N 1. 1-7) Photosensitive in wide spectral region composites based on polyphenylenevinylene. V Syromyatnikov, I. Pomaz, A. Verbitsky, Ya.Vertsimakha,S. Nespurek, S. Pochekaylov. 8-11) Optical properties of gold nanostructures obtained with laser methods. EB Kaganovich, I.M. Kizyak, A.A. Kudryavtsev, E.G. Manoilov, Ye.V. Begun. 12-16) Computer analysis of a-SiC:H/c-Si heterojunction solar cells. IA Pavlov, N.G. Zubrilin, S.I. Osypov. O Bratus', A. E...

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SQO N1 2005 Contents

http://journal-spqeo.org.ua/n1_2006/n1_2006_contents.htm

Author Index (pdf .K). SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS. 1) Excitons and trions in spherical semiconductor quantum dots. IM Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak. 9) Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films. IZ Indutnyy, V.S. Lysenko,. IYu Maidanchuk, V.I.Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko. 14) Modelling of pyroelectric response in inhomogeneous ferroelectric-semiconductor films. Yu Garbovskiy, A. Sadovenk...

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Journal SPQEO Vol 17, 2014

http://journal-spqeo.org.ua/n1_2014/n1_2014_contents.htm

ISSN 1605-6582 (On-line) ISSN 1560-8034 (Print) ISSN 1606-1365 (CD). Volume 17 N 1. DOI: 10.15407/spqeo17.01. On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n -n doping step. Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.1. P. 001-006. Effect of magnetic and electric fields on optical properties of semiconductor spherical layer. VA Holovatsky, I.B. Bernik. Chemical treatment of Cd. Te single crystals with H. VN Babentsov, V...

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